STP18N65M2
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- Mfr.Part #
- STP18N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A TO220
- Stock
- 6,885
- In Stock ：
- 6,885
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 6A, 10V
- Power Dissipation-Max :
- 110W Tc
- Factory Lead Time :
- 16 Weeks
- Drain to Source Voltage (Vdss) :
- 650V
- Length :
- 10.4mm
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 100V
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Base Part Number :
- STP18N
- FET Type :
- N-Channel
- Series :
- MDmesh™ M2
- Width :
- 4.6mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 15.75mm
- Turn On Delay Time :
- 11 ns
- Continuous Drain Current (ID) :
- 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 46 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Datasheets
- STP18N65M2
N-Channel Tube 330m Ω @ 6A, 10V ±25V 770pF @ 100V 20nC @ 10V 650V TO-220-3
STP18N65M2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 770pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 46 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STP18N65M2 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 46 ns
a 650V drain to source voltage (Vdss)
STP18N65M2 Applications
There are a lot of STMicroelectronics
STP18N65M2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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