STP18N60M6
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- Mfr.Part #
- STP18N60M6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13A TO220
- Stock
- 25,793
- In Stock ：
- 25,793
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 16.8nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Series :
- MDmesh™ M6
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 100V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.75V @ 250μA
- Power Dissipation-Max :
- 110W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 16 Weeks
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 6.5A, 10V
- Mounting Type :
- Through Hole
- Datasheets
- STP18N60M6
N-Channel 280m Ω @ 6.5A, 10V ±25V 650pF @ 100V 16.8nC @ 10V 600V TO-220-3
STP18N60M6 Description
The STP18N60M6 is an N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a TO-220 package. The most recent improvements to the well-known and consolidated MDmesh family of SJ MOSFETs are incorporated into the new MDmesh™ M6 technology.
With its brand-new M6 technology, STMicroelectronics improves on the previous generation of MDmesh devices by combining great RDS(on) per area improvement with one of the most efficient switching behaviors available, as well as a user-friendly interface for optimal end-application efficiency.
STP18N60M6 Features
-
Low gate input resistance
-
100% avalanche tested
-
Zener-protected
-
Reduced switching losses
-
Lower RDS(on) per area vs previous generation
STP18N60M6 Applications
-
Switching applications
-
LLC converters
-
Boost PFC converters
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