STP18N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Turn-Off Delay Time :

47 ns

Gate to Source Voltage (Vgs) :

25V

Series :

MDmesh™ II Plus

Continuous Drain Current (ID) :

13A

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

110W Tc

Packaging :

Tube

Fall Time (Typ) :

10.6 ns

ECCN Code :

EAR99

Package / Case :

TO-220-3

Resistance :

280mOhm

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

21.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

791pF @ 100V

Height :

15.75mm

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

52A

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.4mm

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Element Configuration :

Single

Turn On Delay Time :

12 ns

FET Type :

N-Channel

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP18N

Number of Terminations :

3

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Number of Pins :

3

Width :

4.6mm

Radiation Hardening :

No

Rise Time :

9ns

Lead Free :

Lead Free

Number of Elements :

1