STP185N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

330W Tc

Pin Count :

3

Series :

STripFET™

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.0038Ohm

Avalanche Energy Rating (Eas) :

1000 mJ

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

50 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain to Source Breakdown Voltage :

55V

Package / Case :

TO-220-3

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Pulsed Drain Current-Max (IDM) :

480A

Turn-Off Delay Time :

110 ns

Packaging :

Tube

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Number of Terminations :

3

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Additional Feature :

ULTRA-LOW RESISTANCE

Factory Lead Time :

12 Weeks

Base Part Number :

STP185

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Continuous Drain Current (ID) :

120A

Rise Time :

150ns

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 60A, 10V

Power Dissipation :

330W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)