STP185N10F3

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Mfr.Part #
STP185N10F3
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 120A TO220
Stock
28,818
In Stock :
28,818

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Part Number :
STP185
Rds On (Max) @ Id, Vgs :
4.8m Ω @ 60A, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Mount :
Through Hole
JEDEC-95 Code :
TO-220AB
Qualification Status :
Not Qualified
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
100V
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
480A
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Number of Terminations :
3
Power Dissipation-Max :
300W Tc
Drain-source On Resistance-Max :
0.0048Ohm
Series :
STripFET™
DS Breakdown Voltage-Min :
100V
Continuous Drain Current (ID) :
120A
Terminal Position :
Single
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
FET Type :
N-Channel
Factory Lead Time :
12 Weeks
Datasheets
STP185N10F3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP185N10F3 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STP185, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, STP185N10F3 pinout, STP185N10F3 datasheet PDF, STP185N10F3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP185N10F3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP185N10F3


N-Channel Tube 4.8m Ω @ 60A, 10V ±20V 100V TO-220-3

STP185N10F3 Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STP185N10F3 Features


a continuous drain current (ID) of 120A
based on its rated peak drain current 480A.
a 100V drain to source voltage (Vdss)


STP185N10F3 Applications


There are a lot of STMicroelectronics
STP185N10F3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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