STP180NS04ZC

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

JESD-609 Code :

e3

Rise Time :

250ns

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STP180

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4560pF @ 25V

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Pulsed Drain Current-Max (IDM) :

480A

Mount :

Through Hole

Power Dissipation :

300W

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.0042Ohm

Package / Case :

TO-220-3

Element Configuration :

Single

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

ECCN Code :

EAR99

Power Dissipation-Max :

330W Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 40A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Fall Time (Typ) :

115 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

SAFeFET™

Drain to Source Breakdown Voltage :

33V

Continuous Drain Current (ID) :

120A