STP180N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

480A

Turn-Off Delay Time :

110 ns

Turn On Delay Time :

25 ns

Packaging :

Tube

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

15.75mm

Operating Temperature :

-55°C~175°C TJ

Series :

STripFET™

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 60A, 10V

Base Part Number :

STP180

Nominal Vgs :

4 V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

Resistance :

3.8mOhm

Power Dissipation :

330W

Width :

4.6mm

Power Dissipation-Max :

330W Tc

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Fall Time (Typ) :

50 ns

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Pin Count :

3

Length :

10.4mm

Vgs (Max) :

±20V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Continuous Drain Current (ID) :

60A

Rise Time :

150ns

Package / Case :

TO-220-3