STP180N10F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Rise Time :

97.1ns

Power Dissipation-Max :

315W Tc

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

480A

Contact Plating :

Tin

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

99.9 ns

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 60A, 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

6665pF @ 25V

Power Dissipation :

315W

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

114.6nC @ 10V

RoHS Status :

ROHS3 Compliant

Resistance :

5.1mOhm

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

120A

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

12 Weeks

Pin Count :

3

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn On Delay Time :

25.6 ns

Fall Time (Typ) :

6.9 ns

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™ III

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Part Number :

STP180

Mounting Type :

Through Hole