STP17NK40Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rise Time :

23ns

Power Dissipation :

35W

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Length :

10.4mm

Avalanche Energy Rating (Eas) :

450 mJ

Width :

4.6mm

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.25Ohm

Drain to Source Breakdown Voltage :

400V

Continuous Drain Current (ID) :

15A

Element Configuration :

Single

FET Type :

N-Channel

Base Part Number :

STP17N

Pin Count :

3

Number of Pins :

3

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

60A

Radiation Hardening :

No

Package / Case :

TO-220-3 Full Pack

Threshold Voltage :

3.75V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

13 ns

Height :

16.4mm

Power Dissipation-Max :

35W Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Vgs (Max) :

±30V

Contact Plating :

Tin

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

250m Ω @ 7.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Series :

SuperMESH™

Transistor Element Material :

SILICON

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

55 ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V