STP17N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

620V

Radiation Hardening :

No

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STP17N

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Current - Continuous Drain (Id) @ 25°C :

15.5A Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE ENERGY RATED

Fall Time (Typ) :

63 ns

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Series :

SuperMESH3™

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Power Dissipation-Max :

190W Tc

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

380m Ω @ 7.5A, 10V

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

22 ns

Power Dissipation :

190W

Number of Elements :

1

Pin Count :

3

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Resistance :

280mOhm

Element Configuration :

Single

Lead Free :

Lead Free

JESD-609 Code :

e3

Turn-Off Delay Time :

91 ns

Rise Time :

26ns

Continuous Drain Current (ID) :

15.5A

Packaging :

Tube

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

60A