STP16NS25

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

140W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

STP16N

Drain to Source Breakdown Voltage :

250V

Current Rating :

16A

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Fall Time (Typ) :

32 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Series :

MESH OVERLAY™

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

64A

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1270pF @ 25V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-65°C~150°C TJ

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V

Power Dissipation :

140W

Avalanche Energy Rating (Eas) :

600 mJ

Drain-source On Resistance-Max :

0.28Ohm

FET Type :

N-Channel

Voltage - Rated DC :

250V

Package / Case :

TO-220-3

Number of Pins :

3

Rise Time :

26ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

16A