STP16NM50N
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- Mfr.Part #
- STP16NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A TO220AB
- Stock
- 30,291
- In Stock ：
- 30,291
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- STP16N
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Resistance :
- 260mOhm
- Series :
- MDmesh™ II
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 125W Tc
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 470 mJ
- JESD-30 Code :
- R-PSFM-T3
- Fall Time (Typ) :
- 16 ns
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 15ns
- Gate to Source Voltage (Vgs) :
- 25V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 50V
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 15A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 125W
- Element Configuration :
- Single
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 500V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 60 ns
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 7.5A, 10V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Mounting Type :
- Through Hole
- Datasheets
- STP16NM50N
N-Channel Tube 260m Ω @ 7.5A, 10V ±25V 1200pF @ 50V 38nC @ 10V TO-220-3
STP16NM50N Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 470 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 50V.This device conducts a continuous drain current (ID) of 15A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 60A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP16NM50N Features
the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 60A.
STP16NM50N Applications
There are a lot of STMicroelectronics
STP16NM50N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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