STP16NK65Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

17 ns

Power Dissipation-Max :

190W Tc

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

650V

Rds On (Max) @ Id, Vgs :

500m Ω @ 6.5A, 10V

Mounting Type :

Through Hole

Power Dissipation :

190W

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Current Rating :

13A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Turn On Delay Time :

25 ns

Additional Feature :

AVALANCHE RATED

Rise Time :

25ns

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

13A

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Base Part Number :

STP16N

Input Capacitance (Ciss) (Max) @ Vds :

2750pF @ 25V

Pulsed Drain Current-Max (IDM) :

52A

JESD-609 Code :

e3

Vgs (Max) :

±30V

Turn-Off Delay Time :

68 ns

FET Type :

N-Channel

Number of Terminations :

3

Number of Elements :

1

Transistor Application :

SWITCHING

Series :

SuperMESH™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

350 mJ

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.5Ohm

Drain to Source Breakdown Voltage :

650V

Vgs(th) (Max) @ Id :

4.5V @ 100μA