STP16NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

190W

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

56A

Height :

15.75mm

Element Configuration :

Single

Vgs (Max) :

±30V

Power Dissipation-Max :

190W Tc

Series :

SuperMESH™

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 25V

Turn On Delay Time :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Number of Elements :

1

Mounting Type :

Through Hole

Width :

4.6mm

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Length :

10.4mm

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Package / Case :

TO-220-3

Base Part Number :

STP16N

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

420m Ω @ 7A, 10V

Mount :

Through Hole

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

38Ohm

Drain to Source Breakdown Voltage :

600V

Threshold Voltage :

3.75V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Voltage - Rated DC :

600V

Turn-Off Delay Time :

70 ns

JEDEC-95 Code :

TO-220AB

Rise Time :

25ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Current Rating :

14A

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Continuous Drain Current (ID) :

14A

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

RoHS Status :

ROHS3 Compliant