STP16NF06
- Mfr.Part #
- STP16NF06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 16A TO220AB
- Stock
- 13,027
- In Stock :
- 13,027
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 6 ns
- FET Type :
- N-Channel
- Length :
- 10.4mm
- Continuous Drain Current (ID) :
- 16A
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 315pF @ 25V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 8A, 10V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Voltage - Rated DC :
- 60V
- Power Dissipation-Max :
- 45W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Width :
- 4.6mm
- Power Dissipation :
- 45W
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Base Part Number :
- STP16N
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 7 ns
- Current Rating :
- 16A
- Drain to Source Breakdown Voltage :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 64A
- Rise Time :
- 18ns
- Height :
- 9.15mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Series :
- STripFET™ II
- Resistance :
- 100MOhm
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Turn-Off Delay Time :
- 17 ns
- Vgs (Max) :
- ±20V
- Datasheets
- STP16NF06

N-Channel Tube 100m Ω @ 8A, 10V ±20V 315pF @ 25V 13nC @ 10V TO-220-3
STP16NF06 Description
This Power MOSFET is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP16NF06 Features
Exceptional DV/DT capability
Low gate charge at 100°C
Application-oriented characterization
STP16NF06 Applications
Switching application
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