STP160N75F3
- Mfr.Part #
- STP160N75F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A TO220AB
- Stock
- 10,832
- In Stock :
- 10,832
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 330W
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 6750pF @ 25V
- Pin Count :
- 3
- Power Dissipation-Max :
- 330W Tc
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 22 ns
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Through Hole
- Series :
- STripFET™
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Width :
- 4.6mm
- Fall Time (Typ) :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 480A
- Mount :
- Through Hole
- Rise Time :
- 65ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.4mm
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 75V
- Resistance :
- 4mOhm
- Height :
- 15.75mm
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 60A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 100 ns
- Base Part Number :
- STP160
- Threshold Voltage :
- 4V
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 120A
- Datasheets
- STP160N75F3

N-Channel Tube 4m Ω @ 60A, 10V ±20V 6750pF @ 25V 85nC @ 10V TO-220-3
STP160N75F3 Description
STP160N75F3, this N-channel enhancement mode Power MOSFET is the latest refinement of ST's STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
STP160N75F3 Features
-
Ultra low on-resistance
-
100% Avalanche tested
-
ROHS3 Compliant
-
No SVHC
-
Lead Free
STP160N75F3 Applications
-
Switching applications
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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