STP15NM60ND
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- Mfr.Part #
- STP15NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO220AB
- Stock
- 81,498
- In Stock ：
- 81,498
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 47 ns
- Fall Time (Typ) :
- 28 ns
- Element Configuration :
- Single
- Rise Time :
- 20ns
- Number of Terminations :
- 3
- Turn On Delay Time :
- 17 ns
- Vgs (Max) :
- ±25V
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Height :
- 15.75mm
- Resistance :
- 299mOhm
- Packaging :
- Tube
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 14A
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Base Part Number :
- STP15N
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Length :
- 10.4mm
- Series :
- FDmesh™ II
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 125W
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 50V
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 56A
- Threshold Voltage :
- 4V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 125W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 7A, 10V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 600V
- Datasheets
- STP15NM60ND
N-Channel Tube 299m Ω @ 7A, 10V ±25V 1250pF @ 50V 40nC @ 10V TO-220-3
STP15NM60ND Overview
The maximum input capacitance of this device is 1250pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 47 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 56A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STP15NM60ND Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
STP15NM60ND Applications
There are a lot of STMicroelectronics
STP15NM60ND applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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