STP15NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

TO-220-3

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN

Power Dissipation :

125W

Pin Count :

3

Number of Terminations :

3

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

STP15N

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

125W Tc

Mount :

Through Hole

Fall Time (Typ) :

30 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

299m Ω @ 7A, 10V

Series :

MDmesh™ II

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Drain-source On Resistance-Max :

0.299Ohm

Turn-Off Delay Time :

80 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

56A

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

300 mJ

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Continuous Drain Current (ID) :

14A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

14ns