STP15N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 100V

Base Part Number :

STP15N

Lead Free :

Lead Free

Power Dissipation :

85W

Radiation Hardening :

No

Power Dissipation-Max :

125W Tc

Height :

15.75mm

Case Connection :

DRAIN

Series :

MDmesh™ V

Turn On Delay Time :

30 ns

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Drain to Source Breakdown Voltage :

650V

Mounting Type :

Through Hole

Turn-Off Delay Time :

30 ns

Mount :

Through Hole

Width :

4.6mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Factory Lead Time :

17 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Resistance :

340mOhm

Number of Terminations :

3

Packaging :

Tube

Package / Case :

TO-220-3

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

340m Ω @ 5.5A, 10V

Pulsed Drain Current-Max (IDM) :

44A

Operating Mode :

ENHANCEMENT MODE

Length :

10.4mm

Element Configuration :

Single

Continuous Drain Current (ID) :

11A