STP150NF55

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 60A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-220-3

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

850 mJ

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STP150

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

140 ns

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Pin Count :

3

Resistance :

6mOhm

Fall Time (Typ) :

80 ns

Lead Free :

Lead Free

Packaging :

Tube

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Turn On Delay Time :

35 ns

Pulsed Drain Current-Max (IDM) :

480A

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Rise Time :

180ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

55V

Power Dissipation :

300W

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Continuous Drain Current (ID) :

120A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Series :

STripFET™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON