STP150N3LLH6

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Mfr.Part #
STP150N3LLH6
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 80A TO220AB
Stock
5,795
In Stock :
5,795

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
4040pF @ 25V
Pulsed Drain Current-Max (IDM) :
320A
Reach Compliance Code :
not_compliant
Lead Free :
Lead Free
Power Dissipation-Max :
110W Tc
Base Part Number :
STP150
Transistor Application :
SWITCHING
Turn-Off Delay Time :
75 ns
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Pin Count :
3
ECCN Code :
EAR99
Packaging :
Tube
Series :
DeepGATE™, STripFET™ VI
Terminal Finish :
Matte Tin (Sn)
Rise Time :
18ns
Fall Time (Typ) :
46 ns
Operating Temperature :
-55°C~175°C TJ
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Breakdown Voltage :
30V
Package / Case :
TO-220-3
Avalanche Energy Rating (Eas) :
525 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Continuous Drain Current (ID) :
80A
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 4.5V
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Mounting Type :
Through Hole
Vgs (Max) :
±20V
FET Type :
N-Channel
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-220AB
Power Dissipation :
110W
Resistance :
3.3MOhm
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
3.3m Ω @ 40A, 10V
Number of Terminations :
3
Datasheets
STP150N3LLH6
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP150N3LLH6 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STP150, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, STP150N3LLH6 pinout, STP150N3LLH6 datasheet PDF, STP150N3LLH6 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP150N3LLH6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP150N3LLH6


N-Channel Tube 3.3m Ω @ 40A, 10V ±20V 4040pF @ 25V 40nC @ 4.5V TO-220-3

STP150N3LLH Description


The STP150N3LLH6 power MOSFET from STMicroelectronics uses a redesigned gate structure and the 6th generation of design guidelines for ST's own STripFET technology. The Power MOSFET that results has the lowest RDS(on) among all packages. It can switch between different electrical signals in addition to enhancing electronic signals. It can dissipate up to 110000 mW of power. The operating temperature range for this MOSFET transistor is -55 °C to 175 °C. The enhancement mode is used by this N channel MOSFET transistor.



STP150N3LLH Features


  • High avalanche ruggedness

  • Low gate drive power losses

  • RDS(on) * Qg industry benchmark

  • Extremely low on-resistance RDS(on)



STP150N3LLH Application


  • Switching applications


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