STP150N3LLH6
- Mfr.Part #
- STP150N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO220AB
- Stock
- 5,795
- In Stock :
- 5,795
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4040pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 320A
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 110W Tc
- Base Part Number :
- STP150
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 75 ns
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Series :
- DeepGATE™, STripFET™ VI
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 18ns
- Fall Time (Typ) :
- 46 ns
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 30V
- Package / Case :
- TO-220-3
- Avalanche Energy Rating (Eas) :
- 525 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 4.5V
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 110W
- Resistance :
- 3.3MOhm
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 40A, 10V
- Number of Terminations :
- 3
- Datasheets
- STP150N3LLH6

N-Channel Tube 3.3m Ω @ 40A, 10V ±20V 4040pF @ 25V 40nC @ 4.5V TO-220-3
STP150N3LLH Description
The STP150N3LLH6 power MOSFET from STMicroelectronics uses a redesigned gate structure and the 6th generation of design guidelines for ST's own STripFET technology. The Power MOSFET that results has the lowest RDS(on) among all packages. It can switch between different electrical signals in addition to enhancing electronic signals. It can dissipate up to 110000 mW of power. The operating temperature range for this MOSFET transistor is -55 °C to 175 °C. The enhancement mode is used by this N channel MOSFET transistor.
STP150N3LLH Features
-
High avalanche ruggedness
-
Low gate drive power losses
-
RDS(on) * Qg industry benchmark
-
Extremely low on-resistance RDS(on)
STP150N3LLH Application
-
Switching applications
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