STP14NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

55 ns

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

650V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

STP14N

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

48A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 50V

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

MDmesh™ II

Power Dissipation-Max :

125W Tc

Resistance :

380mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Fall Time (Typ) :

20 ns

Package / Case :

TO-220-3

Power Dissipation :

125W

Pin Count :

3

Gate to Source Voltage (Vgs) :

25V

Drain Current-Max (Abs) (ID) :

12A

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

6A

Number of Terminations :

3

Nominal Vgs :

3 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Rise Time :

13ns