STP14NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

816pF @ 50V

Length :

10.4mm

Fall Time (Typ) :

32 ns

Pin Count :

3

Height :

15.75mm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Element Configuration :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™ II

ECCN Code :

EAR99

Resistance :

320mOhm

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Mount :

Through Hole

Power Dissipation-Max :

90W Tc

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Power Dissipation :

90W

Pulsed Drain Current-Max (IDM) :

48A

Threshold Voltage :

3V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

320m Ω @ 6A, 10V

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

500V

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Elements :

1

Number of Pins :

3

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Base Part Number :

STP14N

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±25V

Turn On Delay Time :

10.2 ns

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Terminal Position :

Single

FET Type :

N-Channel

Packaging :

Tube

Turn-Off Delay Time :

42 ns

Vgs(th) (Max) @ Id :

4V @ 100µA

Lead Free :

Lead Free

Rise Time :

9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.6mm

Continuous Drain Current (ID) :

12A