STP14NK60Z
- Mfr.Part #
- STP14NK60Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13.5A TO220AB
- Stock
- 11,887
- In Stock :
- 11,887
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 300 mJ
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Power Dissipation :
- 160W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2220pF @ 25V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 18ns
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 6A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 600V
- Fall Time (Typ) :
- 13 ns
- Current Rating :
- 13.5A
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Tc
- Series :
- SuperMESH™
- Turn-Off Delay Time :
- 62 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.5Ohm
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-220-3
- Pulsed Drain Current-Max (IDM) :
- 54A
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 600V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 13.5A
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Power Dissipation-Max :
- 160W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Base Part Number :
- STP14N
- Datasheets
- STP14NK60Z

N-Channel Tube 500m Ω @ 6A, 10V ±30V 2220pF @ 25V 75nC @ 10V TO-220-3
STP14NK60Z Description
The STP14NK60Z is a SuperMESH? N-channel Power MOSFET offering Zener protection and minimized gate charge. This Power MOSFET STP14NK60Z was developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well-established strip-based PowerMESH? layout. In addition to a significant reduction in ON resistance, this STP14NK60Z is designed to ensure a high level of dV/dt capability for the most demanding applications.
STP14NK60Z Features
-
Extremely high dv/dt capability
-
100% avalanche tested
-
Gate charge minimized
-
Very low intrinsic capacitances
-
Very good manufacturing repeatability
-
Zener-protected
STP14NK60Z Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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