STP14NF12

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Radiation Hardening :

No

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Case Connection :

DRAIN

Base Part Number :

STP14N

Package / Case :

TO-220-3

Turn-Off Delay Time :

32 ns

Fall Time (Typ) :

8 ns

Width :

4.6mm

Length :

10.4mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 7A, 10V

Element Configuration :

Single

Vgs (Max) :

±20V

Power Dissipation-Max :

60W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Continuous Drain Current (ID) :

7A

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

16 ns

Height :

15.75mm

Pin Count :

3

ECCN Code :

EAR99

Series :

STripFET™ II

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Rise Time :

25ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

56A

FET Type :

N-Channel

Mount :

Through Hole

Power Dissipation :

60W

Number of Terminations :

3

Drain to Source Breakdown Voltage :

120V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Avalanche Energy Rating (Eas) :

60 mJ

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE