STP140NF55
- Mfr.Part #
- STP140NF55
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO220AB
- Stock
- 5,754
- In Stock :
- 5,754
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 55V
- Continuous Drain Current (ID) :
- 80A
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Resistance :
- 8mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 125 ns
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Width :
- 4.6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.4mm
- Drain to Source Breakdown Voltage :
- 55V
- Fall Time (Typ) :
- 45 ns
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 25V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 30 ns
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 40A, 10V
- Pin Count :
- 3
- Number of Pins :
- 3
- Current Rating :
- 80A
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- STripFET™ II
- REACH SVHC :
- No SVHC
- Height :
- 15.75mm
- Lead Free :
- Lead Free
- Threshold Voltage :
- 3V
- Power Dissipation :
- 300W
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Rise Time :
- 150ns
- Power Dissipation-Max :
- 300W Tc
- Base Part Number :
- STP140
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 142nC @ 10V
- Datasheets
- STP140NF55

N-Channel Tube 8m Ω @ 40A, 10V ±20V 5300pF @ 25V 142nC @ 10V TO-220-3
STP140NF55 Description
The "Single Feature SizeTM" strip-based technique used by STMicroelectronics to create this Power MOSFET is its most recent innovation. The resultant transistor has outstanding manufacturing reproducibility because to its rugged avalanche features, extremely high packing density for low on-resistance, and minimally critical alignment stages.
STP140NF55 Features
-
Drain to Source Breakdown Voltage: 55V
-
Gate to Source Voltage (Vgs): 20V
-
Continuous Drain Current (ID): 80A
-
Current Rating: 80A
STP140NF55 Applications
-
Motor control
-
High current, switching application
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