STP13NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

24.5nC @ 10V

Height :

15.75mm

Continuous Drain Current (ID) :

11A

JEDEC-95 Code :

TO-220AB

Resistance :

380mOhm

Series :

FDmesh™ II

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Turn-Off Delay Time :

9.6 ns

Turn On Delay Time :

46.5 ns

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

FET Type :

N-Channel

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

845pF @ 50V

Factory Lead Time :

16 Weeks

Packaging :

Tube

Number of Elements :

1

Base Part Number :

STP13N

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

44A

Avalanche Energy Rating (Eas) :

162 mJ

Rise Time :

10ns

Fall Time (Typ) :

15.4 ns

Case Connection :

DRAIN

Width :

4.6mm

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Power Dissipation-Max :

109W Tc

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Length :

10.4mm

Number of Pins :

3