STP13NK50Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Elements :

1

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Threshold Voltage :

3.75V

Power Dissipation-Max :

140W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Rise Time :

23ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Termination :

Through Hole

Power Dissipation :

140W

Pulsed Drain Current-Max (IDM) :

44A

Qualification Status :

Not Qualified

Fall Time (Typ) :

24 ns

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Base Part Number :

STP13N

Series :

SuperMESH™

Drain-source On Resistance-Max :

0.48Ohm

Rds On (Max) @ Id, Vgs :

480m Ω @ 6.5A, 10V

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

500V

Turn-Off Delay Time :

61 ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Drain to Source Breakdown Voltage :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Packaging :

Tube

Nominal Vgs :

3.75 V

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

11A

Avalanche Energy Rating (Eas) :

240 mJ