STP13N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STP13N

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 100µA

Turn On Delay Time :

16 ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drain-source On Resistance-Max :

0.45Ohm

Height :

15.75mm

Rise Time :

16ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

SuperMESH5™

Vgs (Max) :

±30V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Power Dissipation :

190W

Number of Terminations :

3

Length :

10.4mm

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Turn-Off Delay Time :

42 ns

Pulsed Drain Current-Max (IDM) :

48A

Width :

4.6mm

Element Configuration :

Single

Drain to Source Breakdown Voltage :

800V

Packaging :

Tube

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

450m Ω @ 6A, 10V

Factory Lead Time :

17 Weeks

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

Continuous Drain Current (ID) :

12A

Power Dissipation-Max :

190W Tc

Number of Elements :

1

Fall Time (Typ) :

16 ns