STP13N65M2

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Mfr.Part #
STP13N65M2
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 650V 10A TO220
Stock
3,217
In Stock :
3,217

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
590pF @ 100V
Operating Temperature :
150°C TJ
Base Part Number :
STP13N
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Element Configuration :
Single
Series :
MDmesh™ M2
Power Dissipation-Max :
110W Tc
Factory Lead Time :
16 Weeks
ECCN Code :
EAR99
Turn-Off Delay Time :
38 ns
RoHS Status :
ROHS3 Compliant
Width :
4.6mm
Packaging :
Tube
Vgs (Max) :
±25V
Rds On (Max) @ Id, Vgs :
430m Ω @ 5A, 10V
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
10A
Drain to Source Voltage (Vdss) :
650V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
10.4mm
Turn On Delay Time :
11 ns
Gate to Source Voltage (Vgs) :
25V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
FET Type :
N-Channel
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
15.75mm
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Mount :
Surface Mount, Through Hole
Datasheets
STP13N65M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP13N65M2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:STP13N, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, STP13N65M2 pinout, STP13N65M2 datasheet PDF, STP13N65M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP13N65M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP13N65M2


N-Channel Tube 430m Ω @ 5A, 10V ±25V 590pF @ 100V 17nC @ 10V 650V TO-220-3

STP13N65M2 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 590pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STP13N65M2 Features


a continuous drain current (ID) of 10A
the turn-off delay time is 38 ns
a 650V drain to source voltage (Vdss)


STP13N65M2 Applications


There are a lot of STMicroelectronics
STP13N65M2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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