STP12PF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

60W

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Fall Time (Typ) :

10 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

48A

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pin Count :

3

Length :

10.4mm

Lead Free :

Lead Free

Package / Case :

TO-220-3

Width :

4.6mm

Number of Pins :

3

Height :

9.15mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

200m Ω @ 10A, 10V

Voltage - Rated DC :

-60V

Weight :

4.535924g

Base Part Number :

STP12

Turn-Off Delay Time :

40 ns

Continuous Drain Current (ID) :

12A

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 25V

Turn On Delay Time :

20 ns

Resistance :

200mOhm

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Current Rating :

-12A

Vgs (Max) :

±20V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

200 mJ

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Termination :

Through Hole

Rise Time :

40ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Series :

STripFET™ II

Number of Terminations :

3

Drain to Source Breakdown Voltage :

-60V

Dual Supply Voltage :

60V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

60W Tc

FET Type :

P-Channel

Nominal Vgs :

3.4 V

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

3.4V