STP12NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Resistance :

410mOhm

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

MDmesh™ II

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

30.5nC @ 10V

Packaging :

Tube

Power Dissipation-Max :

90W Tc

Power Dissipation :

90W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

40A

Rise Time :

9ns

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

410m Ω @ 5A, 10V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 50V

Avalanche Energy Rating (Eas) :

200 mJ

Fall Time (Typ) :

10 ns

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Base Part Number :

STP12

ECCN Code :

EAR99

Vgs (Max) :

±25V

Element Configuration :

Single

Continuous Drain Current (ID) :

10A

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

60 ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V