STP12NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Resistance :

380mOhm

Power Dissipation :

100W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 50V

Pulsed Drain Current-Max (IDM) :

44A

Base Part Number :

STP12

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

500V

Lead Free :

Lead Free

Number of Elements :

1

Current Rating :

11A

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Pin Count :

3

JESD-609 Code :

e3

Fall Time (Typ) :

14 ns

Turn-Off Delay Time :

60 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

11A

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Threshold Voltage :

3V

Rise Time :

15ns

REACH SVHC :

No SVHC

Isolation Voltage :

2.5kV

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Series :

MDmesh™ II

Element Configuration :

Single

Package / Case :

TO-220-3

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Packaging :

Tube

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Power Dissipation-Max :

100W Tc

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole