STP12NM50FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Power Dissipation-Max :

35W Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Lead Free :

Lead Free

Pin Count :

3

Continuous Drain Current (ID) :

12A

JEDEC-95 Code :

TO-220AB

Number of Channels :

1

Element Configuration :

Single

Radiation Hardening :

No

Resistance :

350mOhm

Series :

MDmesh™

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 50μA

Power Dissipation :

35W

Number of Terminations :

3

Drain to Source Breakdown Voltage :

500V

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

-65°C~150°C TJ

Base Part Number :

STP12

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Turn On Delay Time :

20 ns

Width :

4.6mm

Length :

10.4mm

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

12A

Avalanche Energy Rating (Eas) :

400 mJ

Pulsed Drain Current-Max (IDM) :

48A

FET Type :

N-Channel

Number of Pins :

3

Threshold Voltage :

4V

Height :

20mm

Transistor Application :

SWITCHING

Rise Time :

10ns

Voltage - Rated DC :

500V

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

RoHS Status :

ROHS3 Compliant