STP12NM50FD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

400m Ω @ 6A, 10V

Turn On Delay Time :

19 ns

Power Dissipation :

160W

Operating Temperature :

-65°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Vgs (Max) :

±30V

Base Part Number :

STP12

Number of Elements :

1

Peak Reflow Temperature (Cel) :

245

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Rise Time :

10ns

Mounting Type :

Through Hole

Turn-Off Delay Time :

39 ns

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current Rating :

12A

Pulsed Drain Current-Max (IDM) :

48A

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Series :

FDmesh™

Voltage - Rated DC :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

400 mJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

12A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Mount :

Through Hole

Fall Time (Typ) :

18 ns

Power Dissipation-Max :

160W Tc

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.4Ohm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

500V

Packaging :

Tube

Lead Free :

Lead Free