STP12NM50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 50μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Length :

10.4mm

Power Dissipation-Max :

160W Tc

Width :

4.6mm

Operating Temperature :

-65°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Series :

MDmesh™

Weight :

4.535924g

Continuous Drain Current (ID) :

12A

Resistance :

350mOhm

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

400 mJ

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

4V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

500V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Transistor Application :

SWITCHING

Pin Count :

3

Current Rating :

12A

Number of Channels :

1

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

48A

Lead Free :

Lead Free

Mount :

Through Hole

Packaging :

Tube

Element Configuration :

Single

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

Base Part Number :

STP12

Package / Case :

TO-220-3

Rise Time :

10ns

Voltage - Rated DC :

500V

Height :

19.68mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Power Dissipation :

160W