STP12N65M5
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- Mfr.Part #
- STP12N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8.5A TO220AB
- Stock
- 20,700
- In Stock ：
- 20,700
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 70W
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 23.4 ns
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 17 Weeks
- Series :
- MDmesh™ V
- Turn-Off Delay Time :
- 15.6 ns
- Turn On Delay Time :
- 22.6 ns
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Rise Time :
- 17.6ns
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 8.5A
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Tc
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 4.3A, 10V
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.6mm
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Base Part Number :
- STP12
- Nominal Vgs :
- 4 V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 15.75mm
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 650V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 70W Tc
- Length :
- 10.4mm
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 100V
- Datasheets
- STP12N65M5
N-Channel Tube 430m Ω @ 4.3A, 10V ±25V 900pF @ 100V 22nC @ 10V TO-220-3
STP12N65M5 Overview
A device's maximum input capacitance is 900pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15.6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP12N65M5 Features
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 15.6 ns
STP12N65M5 Applications
There are a lot of STMicroelectronics
STP12N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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