STP12N120K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 100µA

FET Type :

N-Channel

Power Dissipation :

250W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

1200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

44.2nC @ 10V

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

48A

Factory Lead Time :

17 Weeks

Drain-source On Resistance-Max :

0.69Ohm

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Pin Count :

3

Continuous Drain Current (ID) :

12A

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 100V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Series :

MDmesh™ K5

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

690m Ω @ 6A, 10V

Packaging :

Tube

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

250W Tc

Number of Terminations :

3

Base Part Number :

STP12