STP120NH03L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Packaging :

Tube

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Turn On Delay Time :

16 ns

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

110W Tc

Additional Feature :

LOW THRESHOLD

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

240A

Pin Count :

3

Rise Time :

95ns

Turn-Off Delay Time :

48 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 30A, 10V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

245

DS Breakdown Voltage-Min :

30V

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.0105Ohm

Continuous Drain Current (ID) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Fall Time (Typ) :

23 ns

Time@Peak Reflow Temperature-Max (s) :

40

Series :

STripFET™

Base Part Number :

STP120

Mount :

Through Hole

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

700 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE