STP120NF10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

233nC @ 10V

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Turn-Off Delay Time :

132 ns

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

312W

Radiation Hardening :

No

Number of Terminations :

3

Weight :

4.535924g

Width :

4.6mm

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

550 mJ

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Current Rating :

120A

Turn On Delay Time :

25 ns

Mounting Type :

Through Hole

ECCN Code :

EAR99

Height :

9.15mm

Series :

STripFET™ II

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 60A, 10V

Length :

10.4mm

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Base Part Number :

STP120

Pulsed Drain Current-Max (IDM) :

440A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Power Dissipation-Max :

312W Tc

Fall Time (Typ) :

68 ns

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Continuous Drain Current (ID) :

110A

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Resistance :

10.5mOhm

Threshold Voltage :

4V

Rise Time :

90ns

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

100V

Lead Free :

Lead Free