STP120N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

40 ns

Base Part Number :

STP120

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3850pF @ 25V

Lead Free :

Lead Free

ECCN Code :

EAR99

Length :

10.4mm

Number of Pins :

3

Turn On Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Continuous Drain Current (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

110W

Pin Count :

3

Power Dissipation-Max :

110W Tc

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

20 ns

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 40A, 10V

Number of Elements :

1

Width :

4.6mm

JEDEC-95 Code :

TO-220AB

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

Element Configuration :

Single

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

20 Weeks

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

JESD-609 Code :

e3

Rise Time :

70ns

Gate to Source Voltage (Vgs) :

20V

Height :

15.75mm