STP120N10F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation-Max :

300W Tc

Case Connection :

DRAIN

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

390A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.01Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

215 mJ

Base Part Number :

STP120

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

120A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Terminations :

3

Packaging :

Tube