STP11NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Number of Elements :

1

Element Configuration :

Single

Lead Free :

Lead Free

Resistance :

380mOhm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

48A

Rds On (Max) @ Id, Vgs :

455m Ω @ 5.5A, 10V

Transistor Element Material :

SILICON

Number of Terminations :

3

Rise Time :

13ns

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

12A

Turn-Off Delay Time :

55 ns

Power Dissipation-Max :

110W Tc

Base Part Number :

STP11N

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 50V

Fall Time (Typ) :

20 ns

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

JESD-609 Code :

e3

Pin Count :

3

Radiation Hardening :

No

Turn On Delay Time :

11 ns

Mount :

Through Hole

ECCN Code :

EAR99

Packaging :

Tube

Package / Case :

TO-220-3

Series :

MDmesh™ II

Avalanche Energy Rating (Eas) :

300 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

125W

JEDEC-95 Code :

TO-220AB