STP11NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Turn On Delay Time :

16 ns

Package / Case :

TO-220-3

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mount :

Through Hole

Resistance :

450mOhm

Base Part Number :

STP11N

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

200 mJ

REACH SVHC :

No SVHC

Power Dissipation :

90W

Transistor Element Material :

SILICON

Contact Plating :

Tin

Threshold Voltage :

4V

Pin Count :

3

Rise Time :

7ns

Height :

15.75mm

Pulsed Drain Current-Max (IDM) :

40A

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

450m Ω @ 5A, 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Width :

4.6mm

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Series :

FDmesh™ II

Vgs (Max) :

±25V

FET Type :

N-Channel

Power Dissipation-Max :

90W Tc

Turn-Off Delay Time :

50 ns

Element Configuration :

Single

Mounting Type :

Through Hole

Fall Time (Typ) :

9 ns

Length :

10.4mm

Continuous Drain Current (ID) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

10V