STP11NM60FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

11 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.45Ohm

Pulsed Drain Current-Max (IDM) :

44A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Terminations :

3

Height :

16.4mm

Rise Time :

20ns

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

20 ns

Number of Pins :

3

Pin Count :

3

Current Rating :

11A

Width :

4.6mm

Qualification Status :

Not Qualified

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

11A

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

35W

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Mount :

Through Hole

Length :

10.4mm

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Case Connection :

Isolated

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Series :

MDmesh™

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Rds On (Max) @ Id, Vgs :

450m Ω @ 5.5A, 10V

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

6 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Element Configuration :

Single

Voltage - Rated DC :

650V

Power Dissipation-Max :

35W Tc