STP11NM60FDFP
- Mfr.Part #
- STP11NM60FDFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 11A TO220FP
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Min Operating Temperature :
- -65°C
- Pulsed Drain Current-Max (IDM) :
- 44A
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 5.5A, 10V
- Power Dissipation :
- 35W
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 15 ns
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Current Rating :
- 11A
- Turn On Delay Time :
- 20 ns
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 600V
- Threshold Voltage :
- 4V
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- FET Type :
- N-Channel
- Series :
- FDmesh™
- Continuous Drain Current (ID) :
- 11A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Resistance :
- 450mOhm
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Rise Time :
- 16ns
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Transistor Application :
- SWITCHING
- Base Part Number :
- STP11N
- Power Dissipation-Max :
- 35W Tc
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 16 Weeks
- Drain to Source Breakdown Voltage :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Datasheets
- STP11NM60FDFP

N-Channel Tube 450m Ω @ 5.5A, 10V ±30V 900pF @ 25V 40nC @ 10V TO-220-3 Full Pack
STP11NM60FDFP Overview
The maximum input capacitance of this device is 900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.There is no pulsed drain current maximum for this device based on its rated peak drain current 44A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STP11NM60FDFP Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
based on its rated peak drain current 44A.
a threshold voltage of 4V
STP11NM60FDFP Applications
There are a lot of STMicroelectronics
STP11NM60FDFP applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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