STP11NM60A

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Base Part Number :

STP11N

Current Rating :

11A

Drain-source On Resistance-Max :

0.45Ohm

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

44A

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Voltage - Rated DC :

600V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Series :

MDmesh™

Power Dissipation :

110W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

450m Ω @ 5.5A, 10V

Number of Terminations :

3

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

245

Continuous Drain Current (ID) :

11A

Qualification Status :

Not Qualified

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

110W Tc

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1211pF @ 25V

Fall Time (Typ) :

10 ns

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ