STP11NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

8 ns

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Turn-Off Delay Time :

33 ns

Pin Count :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Power Dissipation :

70W

Length :

10.4mm

Threshold Voltage :

3V

Power Dissipation-Max :

70W Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Number of Pins :

3

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±25V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Rise Time :

10ns

Lead Free :

Lead Free

ECCN Code :

EAR99

Series :

MDmesh™ II

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

9A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STP11N

Height :

15.75mm

Width :

4.6mm

Continuous Drain Current (ID) :

8.5A

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

470m Ω @ 4.5A, 10V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Resistance :

470mOhm

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

547pF @ 50V