STP11N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate to Source Voltage (Vgs) :

25V

Turn-Off Delay Time :

23 ns

Operating Mode :

ENHANCEMENT MODE

Length :

10.4mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Lead Free :

Lead Free

Power Dissipation-Max :

85W Tc

Transistor Element Material :

SILICON

Number of Pins :

3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

23 ns

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

85W

Drain-source On Resistance-Max :

0.48Ohm

Drain Current-Max (Abs) (ID) :

9A

Element Configuration :

Single

Base Part Number :

STP11N

Series :

MDmesh™ V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

9A

Width :

4.6mm

Radiation Hardening :

No

Mount :

Through Hole

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

644pF @ 100V

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

17 Weeks

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

650V

Height :

15.75mm

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V