STP11N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Threshold Voltage :

3.75V

Rise Time :

18ns

Lead Free :

Lead Free

Turn On Delay Time :

7 ns

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Additional Feature :

ULTRA-LOW RESISTANCE

Length :

10.4mm

Base Part Number :

STP11N

Avalanche Energy Rating (Eas) :

170 mJ

Element Configuration :

Single

Packaging :

Tube

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Continuous Drain Current (ID) :

10A

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 50V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

525V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Height :

15.75mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Fall Time (Typ) :

42 ns

Power Dissipation :

125W

Series :

SuperMESH3™

Rds On (Max) @ Id, Vgs :

510m Ω @ 5A, 10V

Width :

4.6mm

Resistance :

410mOhm

Power Dissipation-Max :

125W Tc

Pin Count :

3

Turn-Off Delay Time :

281 ns

Pulsed Drain Current-Max (IDM) :

40A